Title :
Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure
Author :
Imafuji, Osamu ; Fukuhisa, Toshiya ; Yuri, Masaaki ; Mannoh, Masaya ; Yoshikawa, Akio ; Itoh, Kunio
Author_Institution :
Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan
Abstract :
Low operating current and high-temperature operation has been demonstrated in 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned (RISA) structure. The RISA structure features an Al0.5In0.5P current blocking layer, which leads to small internal loss in the waveguide and substantially reduced operating carrier density. The resultant operating current for 50-mW continuous-wave at 70°C is as low as 98 mA, which is almost a half of the lowest value ever reported
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; laser beams; optical losses; quantum well lasers; refractive index; waveguide lasers; 650 nm; 70 C; 98 mA; Al0.5In0.5P; Al0.5In0.5P current blocking layer; AlGaInP; current blocking layer; high-power laser diodes; high-temperature operation; internal loss; low operating current operation; operating carrier density; operating current; real refractive index guided self-aligned structure; self-aligned structure; waveguide; Charge carrier density; DVD; Diode lasers; Memory; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Temperature;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.788442
