650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers

Author

Smowton, P.M. ; Lewis, G.M. ; Yin, M. ; Summers, H.D. ; Berry, G. ; Button, C.C.

Author_Institution

Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK

Volume

5

Issue

3

fYear

1999

Firstpage

735

Lastpage

739

Abstract

By means of numerical simulation of the optical and electrical performance, we have designed 650-nm GaInP-AlGaInP quantum-well lasers with mode expansion layers which have a narrow vertical far-field divergence without sacrificing threshold current or threshold current temperature dependence. We have reduced the measured vertical far-field divergence in a 650-nm laser structure from 35° to 24° full-width at half-maximum without changing the threshold current, operating voltage, or threshold current temperature dependence. We have also calculated the tolerances in the thickness and composition necessary to realize this design in practice

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; laser beams; laser variables measurement; quantum well lasers; 650 nm; GaInP-AlGaInP; composition; design; electrical performance; full-width at half-maximum; integrated optical mode expansion layers; laser structure; mode expansion layers; narrow far-field divergence; narrow vertical far-field divergence; numerical simulation; operating voltage; optical performance; quantum-well lasers; thickness; threshold current; threshold current temperature dependence; tolerances; vertical far-field divergence; Integrated optics; Laser modes; Optical design; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Quantum well lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.788444

Filename

788444