Short-wavelength (0.7 μm<λ<0.78 μm) high-power InGaAsP-active diode lasers

Short-wavelength Al-free active-region compressively strained (Δa/a=1.6%) InGaAsP single-quantum-well diode lasers have been optimized for high continuous-wave (CW) output powers. The use of a highly misoriented substrate is shown to improve the low-temperature spectral characteristics of the active quantum well and result in higher laser performance. By employing strain compensated active regions and growth on highly misoriented substrates, record-high characteristic temperature coefficients T₀ (115-125 K) and T₁ (400-500 K) are achieved for this wavelength region (λ=0.73 μm). A broad waveguide laser design with In_0.5(Ga_0.5 Al_0.5)_0.5P cladding layers is utilized to achieve CW output powers of 3.2 W (100-μm wide, L=1 mm), with stable operation demonstrated at 0.5-W CW