Band-edge-emphasizing photodetector response

Author

Sugimoto, K.-I. ; Nakajima, Kazutoshi ; Mizushima, Yoshihiko

Author_Institution

Hamamatsu Photonics, Japan

Volume

37

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

2298

Lastpage

2302

Abstract

A photodetector having a sensitivity only in a narrow-wavelength region has been fabricated by utilizing a thick semi-insulating GaAs (SI GaAs). Because the photon energy at the peak response is nearly equal to the bandgap energy of GaAs, this detector is called a band-edge-emphasizing photodetector. A theory is proposed to explain this phenomenon. Since GaAs is characterized by a short carrier lifetime and a steep change of the absorption coefficient, the active layer is assumed to be composed of two different parts connected in series, which are specified by a function δ. Good agreement has been shown between the experimental and the theoretical results on the sensitivity characteristics

Keywords

III-V semiconductors; gallium arsenide; photodetectors; semiconductor device models; absorption coefficient; band-edge-emphasizing photodetector; bandgap energy; narrow-wavelength region; photodetector response; photon energy; semi-insulating GaAs; semiconductors; sensitivity characteristics; short carrier lifetime; theory; Absorption; Charge carrier lifetime; Detectors; Gallium arsenide; Gold; Photoconducting devices; Photodetectors; Photodiodes; Photonic band gap; Schottky barriers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.62292

Filename

62292