• DocumentCode
    1550835
  • Title

    Design and fabrication of submicrometer, single crystal Si accelerometer

  • Author

    Weigold, Jason W. ; Najafi, Khalil ; Pang, Stella W.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    10
  • Issue
    4
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    518
  • Lastpage
    524
  • Abstract
    A lateral accelerometer has been designed, simulated, and fabricated using a 3-mask high-aspect ratio technology. Electron beam lithography and high-density plasma etching in an inductively coupled plasma source enabled aspect ratios >30 to be achieved. This makes possible beams with very small spring constants. Combining the ability to measure very small displacement of a proof mass due to narrow capacitive gaps between comb fingers, a highly sensitive accelerometer can be obtained. The fabricated accelerometer with 1 μm beams and 0.2 μm comb gaps had a spring constant of 0.127 N/m, which is close to the calculated values of 0.146 N/m. Based on the capacitance measurements, the accelerometer sensitivity is calculated to be 6.3 fF/g. Reducing the beam width to 0.4 μm lowered the spring constant to 0.03 N/m, and an improved equivalent sensitivity of 79.2 fF/g is calculated. The minimum detectable acceleration is on the order of a few microgravity over a range of hundreds of gravities
  • Keywords
    accelerometers; electron beam lithography; elemental semiconductors; finite element analysis; microsensors; sensitivity; silicon; sputter etching; 0.2 micron; 0.4 to 1 micron; 3-mask high-aspect ratio technology; MEMS; Si; accelerometer sensitivity; beams; capacitance measurements; comb fingers; electron beam lithography; fabrication process; finite element simulation; high-density plasma etching; highly sensitive accelerometer; inductively coupled plasma source; lateral accelerometer design; narrow capacitive gaps; single crystal Si accelerometer; spring constants; submicrometer Si accelerometer; Accelerometers; Electron beams; Etching; Fabrication; Lithography; Plasma applications; Plasma measurements; Plasma simulation; Plasma sources; Springs;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.967374
  • Filename
    967374