Title :
Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon
Author :
Liu, Chih-Yi ; Weng, Min-Hang ; Lin, Jyun-Min
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan
fDate :
7/1/2011 12:00:00 AM
Abstract :
This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.
Keywords :
argon; coplanar waveguides; electrical resistivity; ion implantation; passivation; rapid thermal annealing; recrystallisation; thermal stability; Ar implanted surface passivated high resistivity silicon substrate; CPW line; DC voltage dependence; RTA process; Si based coplanar waveguide; Si:Ar; epitaxial regrowth; rapid thermal annealing; temperature process; thermal processing stability; Argon; Attenuation; Coplanar waveguides; Microwave theory and techniques; Silicon; Substrates; Thermal stability; Coplanar waveguide (CPW); microwave loss; surface passivation; thermal processing stability; thermally-induced electrical instability;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2151850
