Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

Author

Liu, Chih-Yi ; Weng, Min-Hang ; Lin, Jyun-Min

Author_Institution

Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan

Volume

21

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

365

Lastpage

367

Abstract

This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.

Keywords

argon; coplanar waveguides; electrical resistivity; ion implantation; passivation; rapid thermal annealing; recrystallisation; thermal stability; Ar implanted surface passivated high resistivity silicon substrate; CPW line; DC voltage dependence; RTA process; Si based coplanar waveguide; Si:Ar; epitaxial regrowth; rapid thermal annealing; temperature process; thermal processing stability; Argon; Attenuation; Coplanar waveguides; Microwave theory and techniques; Silicon; Substrates; Thermal stability; Coplanar waveguide (CPW); microwave loss; surface passivation; thermal processing stability; thermally-induced electrical instability;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2151850

Filename

5871695