Correlated fluctuations and noise spectra of tunneling and substrate currents before breakdown in thin-oxide MOS devices

Author

Saletti, R. ; Neri, B. ; Olivo, P. ; Modelli, A.

Author_Institution

Centro di Studio per Metodi e Dispositive per Radiotrasmissioni, Pisa, Italy

Volume

37

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

2411

Lastpage

2413

Abstract

The fluctuations of the tunnel and substrate currents in thin-oxide MOS devices biased at high fields are investigated. Preliminary results of noise measurements of the tunnel and substrate currents in thin-oxide (6-7 nm) MOSFET devices and MOS capacitors are presented. It is shown that both the currents are characterized by multilevel random fluctuations which are sometimes correlated. The correlation is complete before breakdown

Keywords

electron device noise; insulated gate field effect transistors; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; tunnelling; 6 to 7 nm; MOS capacitors; MOSFET devices; correlated fluctuations; correlation before breakdown; high fields; multilevel random fluctuations; noise measurements; noise spectra of tunneling; substrate current fluctuations; thin-oxide MOS devices; tunnel current fluctuations; Dielectric substrates; Electric breakdown; Fluctuations; MOS capacitors; MOS devices; MOSFET circuits; Multi-stage noise shaping; Noise level; Silicon; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.62302

Filename

62302