Title :
Correlated fluctuations and noise spectra of tunneling and substrate currents before breakdown in thin-oxide MOS devices
Author :
Saletti, R. ; Neri, B. ; Olivo, P. ; Modelli, A.
Author_Institution :
Centro di Studio per Metodi e Dispositive per Radiotrasmissioni, Pisa, Italy
fDate :
11/1/1990 12:00:00 AM
Abstract :
The fluctuations of the tunnel and substrate currents in thin-oxide MOS devices biased at high fields are investigated. Preliminary results of noise measurements of the tunnel and substrate currents in thin-oxide (6-7 nm) MOSFET devices and MOS capacitors are presented. It is shown that both the currents are characterized by multilevel random fluctuations which are sometimes correlated. The correlation is complete before breakdown
Keywords :
electron device noise; insulated gate field effect transistors; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; tunnelling; 6 to 7 nm; MOS capacitors; MOSFET devices; correlated fluctuations; correlation before breakdown; high fields; multilevel random fluctuations; noise measurements; noise spectra of tunneling; substrate current fluctuations; thin-oxide MOS devices; tunnel current fluctuations; Dielectric substrates; Electric breakdown; Fluctuations; MOS capacitors; MOS devices; MOSFET circuits; Multi-stage noise shaping; Noise level; Silicon; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
