Title :
A high heat flux IGBT micro exchanger setup
Author :
Meysenc, Luc ; Saludjian, Lucas ; Bricard, Alain ; Rael, Stéphane ; Schaeffer, Christian
Author_Institution :
Lab. d´´Electrotech. de Grenoble, St. Martin d´´Heres, France
fDate :
9/1/1997 12:00:00 AM
Abstract :
Much progress has been made over the past few years in the design of power electronic components leading to increasing development of IGBT transistors. Now IGBT´s can dissipate power densities higher than 400 W/cm2 and the thermal environment has become a major factor in their behavior. The aim of this paper is to demonstrate the high performance of a silicon microchannel setup. First, a thermal study enables the theoretical behavior of the setup to be analyzed. Then an optimization method based on genetic algorithms allows us to determine the best sizes for the microchannels. Finally, the theoretical results are compared with experimental measurements
Keywords :
genetic algorithms; heat exchangers; heat sinks; insulated gate bipolar transistors; power transistors; semiconductor device packaging; silicon; thermal analysis; thermal resistance; IGBT; Si; Si microchannel setup; genetic algorithms; high heat flux micro exchanger setup; optimization method; power electronic components; power transistors; thermal environment; Electrical resistance measurement; Heat sinks; Insulated gate bipolar transistors; Microchannel; Optimization methods; Power electronics; Silicon; Temperature; Thermal conductivity; Thermal resistance;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
