DocumentCode :
1551226
Title :
Relationship between measured and intrinsic conductances of MOSFETs
Author :
Cserveny, Stefan
Author_Institution :
Swiss Center for Electron. & Microtech., Neuchatel, Switzerland
Volume :
37
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
2413
Lastpage :
2414
Abstract :
The relationship between measured and intrinsic MOSFET small-signal conductances in the presence of source and drain series resistances given by S.Y. Chou et al. (1987) is modified to include the effect of the source resistance on the substrate bias. The equation relating the measured to the intrinsic conductances of MOSFETs with constant resistances in series with the source and the drain is derived considering the effect of the voltage drops in these resistors on gate-source, drain-source, and substrate-source voltages. The resulting degradation is the same for all small-signal conductances. The general equations make it possible to determine the conditions where the simpler previous equations can be used
Keywords :
insulated gate field effect transistors; semiconductor device models; MOSFETs; degradation; drain resistance; drain-source voltages; gate-source voltages; intrinsic conductances; models; small-signal conductances; source resistance; substrate bias; substrate-source voltages; voltage drops; Books; Differential equations; Electrical resistance measurement; FETs; Joining processes; MOSFETs; Transconductance; Variable structure systems; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.62303
Filename :
62303
Link To Document :
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