1/f noise in bismuth ruthenate based thick-film resistors

Author

Peled, Aaron ; Johanson, Robert E. ; Zloof, Y. ; Kasap, Safa O.

Author_Institution

Electr. & Electron. Dept., Center for Technol. Educ., Holon, Israel

Volume

20

Issue

3

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

355

Lastpage

360

Abstract

We report measurements of 1/f noise in bismuth ruthenate (Bi₂Ru₂O₇) thick-film resistors in the frequency range of 1 Hz to 40 kHz including the dependence of the noise on the bias current, resistance in the range 1 kΩ to 400 kΩ and laser trimming effects. The noise spectra show that the magnitude of the noise parameterized by the relative noise index parameter C has the approximate dependence given by C=3×10^-15 (R_sn_s)^0.6, where n_s is the aspect ratio and R_s is the sheet resistance. Technologically this is an important result since it allows the prediction of the approximate level of noise for any resistor made from the BIROX series compounds from the ink resistivity and the dimensions of the resistor. The link between the noise magnitude and noise models is examined

Keywords

1/f noise; bismuth compounds; electron device noise; thick film resistors; 1 to 40 Hz; 1 to 400 kohm; 1/f noise; BIROX series compounds; Bi₂Ru₂O₇; bias current; ink resistivity; laser trimming effects; noise magnitude; noise models; noise spectra; resistor dimensions; thick-film resistors; Bismuth; Current measurement; Electrical resistance measurement; Frequency measurement; Laser noise; Noise level; Noise measurement; Resistors; Signal to noise ratio; Thickness measurement;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.623030

Filename

623030