Title :
Large-signal characterization of AlGaAs/GaAs HBT´s
Author :
Li, Bin ; Prasad, Sheila ; Yang, Li-Wu ; Wang, S.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
9/1/1999 12:00:00 AM
Abstract :
A modified Ebers-Moll model is developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT´s). The self-heating effect is modeled by a thermal-electrical sub-circuit. The model is verified by comparing the large-signal RF simulation and measurement. Good agreement is achieved when the HBT is biased at low DC power dissipation. The discrepancy between simulation and measurement when the HBT is biased at high DC power dissipation is explained by considering the self-heating effect under large-signal RF excitation
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; thermal analysis; AlGaAs-GaAs; AlGaAs/GaAs HBT; DC power dissipation; heterojunction bipolar transistors; large-signal RF excitation; large-signal RF measurement; large-signal RF simulation; large-signal characterization; modified Ebers-Moll model; self-heating effect; thermal-electrical sub-circuit; Capacitance; Circuit simulation; Circuit synthesis; Contact resistance; Delay effects; Gallium arsenide; Heterojunction bipolar transistors; Power dissipation; Radio frequency; Semiconductor diodes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
