Title :
2W reliable operation in 50 μm-wide InGaAsP/InGaP/AlGaAs (λ=810 nm) SQW diode lasers with tensile-strained InGaP barriers
Author :
Yamanaka, F. ; Wada, M. ; Kuniyasu, T. ; Ohgoh, T. ; Fukunaga, T. ; Hayakawa, T.
Author_Institution :
Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan
fDate :
10/11/2001 12:00:00 AM
Abstract :
A new InGaAsP/InGaP/AlGaAs (λ=810 nm) laser with tensile-strained InGaP barriers, broad waveguide structure and current blocking region near the facet is reported. 2W continuous wave operation over 2000 h from a 50 μm aperture was achieved
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser reliability; optical fabrication; quantum well lasers; waveguide lasers; 2 W; 2000 h; 50 mum; 810 nm; InGaAsP-InGaP-AlGaAs; InGaAsP/InGaP/AlGaAs SQW diode lasers; InGaAsP/InGaP/AlGaAs laser; InGaP; InGaP barriers; aperture; broad waveguide structure; continuous wave operation; current blocking region; facet; reliable operation; single quantum well laser; tensile-strained InGaP barriers; tensile-strained barriers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010869
