λ=8.3 μm GaAs/AlAs quantum cascade lasers incorporating InAs monolayers

Author

Wilson, L.R. ; Cockburn, J.W. ; Carder, D.A. ; Steer, M.J. ; Hopkinson, M. ; Chia, C.K. ; Airey, R. ; Hill, G.

Author_Institution

Dept. of Phys. & Astron., Sheffield Univ., UK

Volume

37

Issue

21

fYear

2001

fDate

10/11/2001 12:00:00 AM

Firstpage

1292

Lastpage

1293

Abstract

The development of GaAs-based quantum cascade lasers incorporating indirect bandgap AlAs barriers in conjunction with ultrathin InAs layers in the active regions of the device is reported. The InAs layers produce a downshift of the energies of the lower lasing states, allowing laser emission to be observed at λ=8.34 μm. The GaAs/InAs/AlAs devices operate in pulsed mode up to a maximum temperature of 250 K, with a characteristic temperature of around 200 K for T>100 K

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; laser modes; monolayers; quantum well lasers; ridge waveguides; waveguide lasers; 100 K; 200 K; 250 K; 8.34 mum; GaAs-AlAs; GaAs-InAs-AlAs; GaAs-based quantum cascade lasers; GaAs/AlAs quantum cascade lasers; GaAs/InAs/AlAs devices; InAs; InAs monolayers; active regions; characteristic temperature; downshift; energies; indirect bandgap AlAs barriers; laser emission; lower lasing states; maximum temperature; pulsed mode; quantum cascade lasers; ultrathin InAs layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010865

Filename

968440