Title :
Low chirp operation in 1.6 μm quantum dot laser under 2.5 GHz direct modulation
Author :
Saito, H. ; Nishi, K. ; Sugou, S.
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Tsukuba, Japan
fDate :
10/11/2001 12:00:00 AM
Abstract :
A long wavelength InAs quantum dot laser on an InP substrate was operated under continuous wave current at room temperature and had a threshold current of 20 mA. Modulation bandwidth was 4 GHz and the low chirp of around 0.01 nm in lasing wavelength was achieved during 2.5 GHz current modulation
Keywords :
III-V semiconductors; chirp modulation; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; optical modulation; quantum well lasers; semiconductor quantum dots; waveguide lasers; 1.6 mum; 2.5 GHz; 20 mA; 298 K; 4 GHz; InAs; InAs quantum dot laser; InAs-InP; InP; InP substrate; continuous wave current; current modulation; direct modulation; lasing wavelength; long wavelength quantum dot laser; low chirp; low chirp operation; modulation bandwidth; quantum dot laser; room temperature; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010887
