Title :
Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature
Author :
Shau, R. ; Ortsiefer, M. ; Rosskopf, J. ; Böhm, G. ; Köhler, F. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fDate :
10/11/2001 12:00:00 AM
Abstract :
Improved 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers were fabricated in the buried tunnel junction technology yielding sub-mA threshold currents, 0.9 V threshold voltage, 10-40 Ω series resistance, output power up to 7 mW (20°C, CW) and CW operation up to >110°C
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; surface emitting lasers; tunnel diodes; 0.9 V; 1.55 mum; 10 to 40 ohm; 110 C; 20 C; 7 mW; CW operation; InGaAlAs-InP; InGaAlAs/InP vertical-cavity surface-emitting lasers; buried tunnel junction technology; fabrication; high operation temperature; large output power; output power; series resistance; sub-mA threshold currents; threshold voltage; vertical-cavity surface-emitting laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010885
