Title :
Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET
Author :
Uryu, Y. ; Asano, T.
Author_Institution :
Center for Microelectron. Syst., Kyushu Inst. of Technol., Iizuka, Japan
fDate :
10/11/2001 12:00:00 AM
Abstract :
The effect of the presence of the electrically floating gate on the bipolar operation of a silicon on insulator metal-oxide-semiconductor field effect transistor (MOSFET) is experimentally investigated. The emitter injection efficiency is shown to be enhanced by the floating gate, the work function of which depletes the base (body) majority carrier from the channel region
Keywords :
MOSFET; silicon-on-insulator; work function; SOI-MOSFET; bipolar action; current amplification; emitter injection efficiency; floating gate; majority carrier depletion; work function;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010881
