Title :
Charge to breakdown mechanism of thin ONO films
Author :
Park, Min Wha ; Khang, Dae-gwan ; Goo, Jung Suk ; Park, Young-June
Author_Institution :
Goldstar Electron Corp., Seoul, South Korea
fDate :
11/1/1990 12:00:00 AM
Abstract :
Effects of charge trapping in the thin ONO (oxide silicon nitride oxide) film caused by the voltage stress on the time-dependent dielectric breakdown (TDDB) mechanism are studied. The purpose is to report the TDDB data of the films after various treatments of charge injection and thermal annealing together with analysis of the experimental data to enhance the understanding of the dielectric breakdown mechanisms of the ONO film. It is observed that the trapped charges injected from one electrode have very little effect on the TDDB mechanism during stress to the other electrode. This suggests that the position of trapped charges may be quite different for the two injecting electrodes and that breakdown mechanisms may be initiated from the different charge positions and sources
Keywords :
dielectric thin films; electric breakdown of solids; failure analysis; metal-insulator-semiconductor devices; reliability; silicon compounds; SiO2-Si3N4-SiO2; TDDB mechanism; breakdown mechanisms; charge injection; charge positions; charge to breakdown mechanism; charge trapping effects; dielectric breakdown mechanisms; experimental data; oxide nitride oxide films; thermal annealing; thin ONO films; time-dependent dielectric breakdown; voltage stress; Annealing; Capacitors; Dielectric breakdown; Dielectric thin films; Electric breakdown; Electrodes; Rapid thermal processing; Semiconductor films; Silicon; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
