مرکز منطقه ای اطلاع رساني علوم و فناوري - Thermally Stable Operation of H-Terminated Diamond FETs by <formula formulatype="inline"> <img src="/images/tex/16953.gif" alt="\\hbox {NO}_{2}"> </formula> Adsorption and <formula formulatype="inline"> <img src="/images/tex/19428.gif" alt="\\hbox {Al}

Title :

Thermally Stable Operation of H-Terminated Diamond FETs by $\\hbox {NO}_{2}$ Adsorption and $\\hbox {Al}_{2</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Hirama, Kazuyuki ; Sato, Hisashi ; Harada, Yuichi ; Yamamoto, Hideki ; Kasu, Makoto</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>NTT Basic Res. Labs., NTT Corp., Atsugi, Japan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>33</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1111</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1113</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Using the NO<sub>2</sub> adsorption and Al<sub>2</sub>O<sub>3</sub> passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I<sub>DS</sub> of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I<sub>DS</sub> of -1000 mA/mm and an RF output power density of 2 W/mm.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; adsorption; alumina; diamond; heating; nitrogen compounds; passivation; thermal stability; Al<sub>2</sub>O<sub>3</sub>; FET characteristics; H-terminated diamond FET; NO<sub>2</sub>; RF output power density; adsorption; diamond FET passivation; drain current; gate length; heating cycle; hydrogen-terminated diamond field-effect transistors; passivated diamond FET; passivation; size 0.2 mum; temperature 200 degC; thermally stable operation; Aluminum oxide; Diamond-like carbon; FETs; Logic gates; Passivation; Temperature measurement; Thermal stability; <formula formulatype=$ $hbox{Al}_{2}hbox{O}_{3}$ passivation; $hbox{NO}_{2}$; diamond; field-effect transistor (FET); thermal stability;