Title :
Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors
Author :
Kaushal, Vikas ; Íñiguez-de-la-Torre, Ignacio ; González, Tomás ; Mateos, Javier ; Lee, Bongmook ; Misra, Veena ; Margala, Martin
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Lowell, MA, USA
Abstract :
This letter presents a first successful integration of a high-k dielectric, i.e., Al2O3, with III-V semiconductors in ballistic deflection transistors (BDTs). The Al2O3 is deposited using atomic layer deposition, which allows the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows strong dependence on the dielectric permittivity of the material filling the etched trenches. When Al2O3 is deposited in the trenches, the transconductance of the BDT is enhanced and shifted to lower gate bias. Moreover, the ratio between output and leakage currents was also enhanced.
Keywords :
alumina; atomic layer deposition; ballistics; dielectric devices; dielectric materials; etching; leakage currents; transistors; Al2O3; BDT; III-V semiconductor; atomic layer deposition; ballistic deflection transistor; dielectric permittivity; high-k dielectric effect; leakage current enhancement; lower gate bias shifting; material filling; transconductance; wall trench etching; Aluminum oxide; Dielectrics; High K dielectric materials; Indium gallium arsenide; Logic gates; Performance evaluation; Transistors; High-k dielectric; III–V semiconductors; nanodevices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2197669