Band selection filter for ultra-wideband/Ku dual-band low-noise amplifier in the CMOS process

This work proposes a band selection filter (BSF) for a fully integrated ultra-wideband (UWB) 3.1-10.6-GHz/Ku band 11.8-14.8-GHz dual-band low-noise amplifier (LNA) in 0.13 μm CMOS technology. Detailed analysis and design criteria of the proposed BSF and wideband LNA are given. The operating frequency band can be selected by the transistor Mn between its off and on states. The BSF is designed, analysed and fabricated in a 0.18 μm CMOS process to verify its feasibility. The BSF has a minimum insertion loss of 0.7/2.9 dB for a low-pass and high-pass filter, and an input-referred IP3 (IIP3) exceeding 20/33 dBm in the off and on states. The measured performance of the switched LNA in UWB band achieves a maximum power gain of 12.3 dB and a 1-dB bandwidth of 2-10.5 GHz, a minimum noise figure (NF) of 4.9 dB and an IIP3 of -16.7 dBm. In Ku band, the measured performance are a maximum power gain of 10.7 dB with a 1-dB bandwidth of 11.5-13.5 GHz, a minimum NF of 5.7 dB and an IIP3 of -16.1 dBm. The dual-band LNA consumes a DC dissipation power of 14.3 mW from a 1.1 V supply voltage. The chip area, excluding pads, is only 0.35 mm².