Title :
Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes
Author :
Ker, Pin Jern ; Marshall, Andrew R J ; Krysa, Andrey B. ; David, John P R ; Tan, Chee Hing
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm2 at 290 K and 910 MΩ-cm2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to ni2 whereas the surface leakage current is proportional to ni from 77 K to 290 K, where ni is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.
Keywords :
III-V semiconductors; amplification; avalanche photodiodes; carrier density; current density; dark conductivity; diffusion; indium compounds; leakage currents; passivation; InAs; SU-8 passivated photodiodes; activation energy; avalanche multiplication factor; avalanche photodiodes; bulk current; carrier concentration; dark current density; diffusion; electron volt energy 0.18 eV; electron volt energy 0.36 eV; generation dominated surface current; leakage current; recombination dominated surface current; temperature 77 K to 290 K; temperature dependence; voltage 0.1 V to 19.5 V; Avalanche photodiodes; Dark current; Leakage current; Noise; Temperature dependence; Temperature measurement; Avalanche photodiode; InAs; impact ionization; leakage current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2011.2159194