The Improvement of Output Characteristics in Tensile Strained-Si-on-Insulator NMOSFET by Channel Band Gap Adjustment

Author

Chang, Hsu-Yu ; Woo, Jason C S

Author_Institution

Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA

Volume

32

Issue

8

fYear

2011

Firstpage

1032

Lastpage

1034

Abstract

An asymmetric device, Si/tensile strained-Si heterojunction channel NMOSFET with a Si channel close to the source and a tensile strained-Si channel close to the drain, is fabricated by tilt angle Ge implantation on the source side of the tensile strained Si-on-insulator (SSOI) and followed by solid-phase recrystallization. This asymmetric device has different electron affinities and threshold voltages along the channel. It causes the redistribution of inversion carriers and lateral electric fields when the asymmetric device is turned on. Improved kink effect and channel length modulation are observed. In addition, the enhanced transconductance is also shown in the asymmetric device. This novel asymmetric device can improve the output characteristics of the NMOSFET fabricated by the SSOI substrate.

Keywords

MOSFET; electric fields; silicon-on-insulator; asymmetric device; channel band gap adjustment; channel length modulation; electron affinities; heterojunction channel NMOSFET; inversion carriers; kink effect; lateral electric fields; solid-phase recrystallization; tensile strained Si-on-insulator; threshold voltages; transconductance enhancement; Heterojunctions; MOSFET circuits; Resistance; Silicon; Strain; Threshold voltage; Transconductance; Asymmetric device; MOSFET; channel length modulation; heterojunction; kink effect; strained Si-on-insulator (SSOI); transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2157802

Filename

5872001