DocumentCode :
1551604
Title :
Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding
Author :
Yokoi, H. ; Mizumoto, T. ; Shinjo, N. ; Futakuchi, N. ; Kaida, N. ; Nakano, Y.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume :
146
Issue :
2
fYear :
1999
fDate :
8/1/1999 12:00:00 AM
Firstpage :
105
Lastpage :
110
Abstract :
An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet-GaInAsP-InP structure, which is realised by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device
Keywords :
gallium arsenide; GaInAsP-InP; integrated optical isolator; magnetic garnet; magneto-optic waveguide; nonreciprocal phase shift; nonreciprocal phase shifters; optical interferometer; reciprocal phase shifter; semiconductor guiding layer; tapered couplers; wafer direct bonding; wafer direct bonding technique;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19990446
Filename :
788758
Link To Document :
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