Title :
40 Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors
Author :
Sano, E. ; Nakajima, H. ; Watanabe, N. ; Yamahata, S.
Author_Institution :
NTT Network Innovation Labs., Kanagawa, Japan
fDate :
7/8/1999 12:00:00 AM
Abstract :
40 Gbit/s error-free operation with a phase margin of 216° has been obtained from a decision IC fabricated using reliable InP/InGaAs composite-collector heterojunction bipolar transistors (CC-HBTs) with a unity current gain cutoff frequency of 116 GHz and a maximum oscillation frequency of 169 GHz. This is the first demonstration of all bipolar transistor decision ICs at such a high bit rate
Keywords :
III-V semiconductors; bipolar digital integrated circuits; decision circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; time division multiplexing; 116 GHz; 169 GHz; 40 Gbit/s; III-V semiconductors; InP-InGaAs; bit rate; composite-collector heterojunction bipolar transistors; decision IC; error-free operation; maximum oscillation frequency; phase margin; unity current gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990798
