DocumentCode
1552042
Title
40 Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors
Author
Sano, E. ; Nakajima, H. ; Watanabe, N. ; Yamahata, S.
Author_Institution
NTT Network Innovation Labs., Kanagawa, Japan
Volume
35
Issue
14
fYear
1999
fDate
7/8/1999 12:00:00 AM
Firstpage
1194
Lastpage
1195
Abstract
40 Gbit/s error-free operation with a phase margin of 216° has been obtained from a decision IC fabricated using reliable InP/InGaAs composite-collector heterojunction bipolar transistors (CC-HBTs) with a unity current gain cutoff frequency of 116 GHz and a maximum oscillation frequency of 169 GHz. This is the first demonstration of all bipolar transistor decision ICs at such a high bit rate
Keywords
III-V semiconductors; bipolar digital integrated circuits; decision circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; time division multiplexing; 116 GHz; 169 GHz; 40 Gbit/s; III-V semiconductors; InP-InGaAs; bit rate; composite-collector heterojunction bipolar transistors; decision IC; error-free operation; maximum oscillation frequency; phase margin; unity current gain cutoff frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990798
Filename
788964
Link To Document