DocumentCode :
1552280
Title :
A new technique for measuring the mechanical properties of thin films
Author :
Sharpe, W.N., Jr. ; Yuan, Bin ; Edwards, R.L.
Author_Institution :
Dept. of Mech. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume :
6
Issue :
3
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
193
Lastpage :
199
Abstract :
Accurate measurement of mechanical properties is very difficult for films that are only a few microns thick. Previously, these properties have been determined by indirect methods such as cantilever beam and diaphragm bulge tests. This paper presents a new technique to measure the Young´s modulus of thin films in a direct manner consistent with its definition. Strain is measured by a laser-based technique that enables direct and accurate recording of strain on a thin-film specimen. Load is recorded with a 1-lb load cell, and an air bearing is used to eliminate friction in the loading system. The specimen is phosphorus-doped polysilicon that has a gage cross section of 3.5 μm thick by 600 μm wide. All 29 uniaxial tensile tests show brittle behavior, and the average values of Young´s modulus and fracture strength are measured to be 170±6.7 GPa and 1.21±0.16 GPa, respectively. One fatigue test is also reported in this paper
Keywords :
mechanical variables measurement; thin films; Si:P; Young modulus; air bearing; fatigue; fracture strength; laser interferometry; measurement technique; mechanical properties; polysilicon; strain gauge; tensile testing; thin film; Displacement measurement; Fatigue; Friction; Mechanical factors; Mechanical variables measurement; Optical films; Optical interferometry; Strain measurement; Testing; Transistors;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.623107
Filename :
623107
Link To Document :
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