Prepassivated AlGaN/GaN HEMTs with improved edge acuity in annealed ohmic contacts

Author

Lee, Minhung ; Ryoo, Y. ; Lee, June-Goo ; Cha, Ho-Young ; Seo, Kazuyuki

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea

Volume

47

Issue

12

fYear

2011

Firstpage

725

Lastpage

726

Abstract

Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step sequential annealing in conjunction with a low-damage SiN_x dry etching technique was employed in a prepassivation process in order to improve the edge acuity in annealed ohmic contacts. As a result, uniformity in breakdown voltage was significantly improved in comparison with a conventional process.

Keywords

III-V semiconductors; aluminium compounds; annealing; etching; gallium compounds; high electron mobility transistors; ohmic contacts; semiconductor device breakdown; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; annealed ohmic contact; breakdown voltage reliability; breakdown voltage uniformity; edge acuity; high electron mobility transistor; low-damage dry etching technique; prepassivated HEMT; sharp edge; two-step sequential annealing;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2011.1190

Filename

5873501