Title :
1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
Author :
Mukai, K. ; Nakata, Y. ; Otsubo, K. ; Sugawara, M. ; Yokoyama, N. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We demonstrate the first 1.3-μm continuous-wave (CW) lasing at room temperature of self-assembled InGaAs-GaAs quantum dots. High-density 1.3-μm emission dots were successfully formed by the combination of low-rate growth and InGaAs-layer overgrowth methods of molecular beam epitaxy. The 1.3-μm ground-level CW lasing occurred at up to 40/spl deg/C, and the threshold current of 8 mA at 25/spl deg/C is less than one thirtieth of values ever reported for 1.3-μm dot pulse lasers. The achievement represents a milestone for creating quantum-dot lasers applicable to fiber-optic communication system.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor quantum dots; 1.3 mum; 25 C; 40 C; 8 mA; CW lasing; InGaAs-GaAs; InGaAs-GaAs quantum dot lasers; InGaAs-layer overgrowth methods; fiber-optic communication system; ground-level CW lasing; high-density emission dots; low-rate growth; molecular beam epitaxy; room temperature; self-assembled InGaAs-GaAs quantum dots; threshold current; Fiber lasers; Molecular beam epitaxial growth; Optical fiber communication; Optical pulses; Quantum dot lasers; Quantum dots; Semiconductor lasers; Temperature; Threshold current; US Department of Transportation;
Journal_Title :
Photonics Technology Letters, IEEE
