Monolithically integrated tunable laterally coupled distributed-feedback lasers

Author

Schreiner, R. ; Nägele, P. ; Körbl, M. ; Gröning, A. ; Gentner, J.L. ; Schweizer, H.

Author_Institution

Phys. Inst., Stuttgart Univ., Germany

Volume

13

Issue

12

fYear

2001

Firstpage

1277

Lastpage

1279

Abstract

A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; optical communication equipment; optical fabrication; optical pumping; quantum well lasers; wavelength division multiplexing; 1590.8 to 1595.2 nm; InGaAsP-InP; active Bragg reflector; epitaxial overgrowth; fabrication process; monolithically integrated tunable laterally coupled distributed-feedback lasers; tunable InGaAsP-InP single-mode lasers; tunable laser types; uncorrugated separately pumped gain region; Distributed feedback devices; Etching; Fiber lasers; Gratings; Laser feedback; Laser tuning; Optical coupling; Optical device fabrication; Pump lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.969880

Filename

969880