Title :
Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing
Author :
Qiu, B.C. ; Liu, X.F. ; Ke, M.L. ; Lee, H.K. ; Bryce, A.C. ; Aitchison, J.S. ; Marsh, J.H. ; Button, C.B.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
In this letter, we report the fabrication of 2 /spl times/ 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO/sub 2/ quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fabrication; semiconductor quantum wells; telecommunication switching; 2 /spl times/ 2 crosspoint switches; 4 to 5 dB; InGaAs-InAlGaAs; InGaAs-InAlGaAs multiple quantum wells; SiO/sub 2/; crosspoint switches; electro-absorption modulators; extinction ratios; low insertion loss; monolithic fabrication; monolithically integrate; optical amplifiers; passive waveguides; quantum-well intermixing; sputtered SiO/sub 2/ quantum-well intermixing; Integrated optics; Optical amplifiers; Optical device fabrication; Optical losses; Optical modulation; Optical switches; Optical waveguides; Quantum wells; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
