Title :
Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region
Author :
Wang, S. ; Sidhu, R. ; Zheng, X.G. ; Li, X. ; Sun, X. ; Holmes, A.L., Jr. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
A novel impact-ionization-engineered multiplication region for avalanche photodiodes is reported. By pseudograding the multiplication region with materials of different ionization threshold energies, the impact ionization of the injected carrier type is localized, while that of the feedback carrier type is suppressed. Low noise (k/sub eff/<0.1), low dark current, and high gain were achieved.
Keywords :
avalanche photodiodes; impact ionisation; optical communication equipment; optical noise; photodetectors; feedback carrier type; graded impact-ionization-engineered multiplication region; high gain; impact ionization; impact-ionization-engineered multiplication region; injected carrier type; ionization threshold energies; low dark current; low noise; low-noise avalanche photodiodes; multiplication region; pseudograding; Avalanche photodiodes; Charge carrier processes; Dark current; Electrons; Feedback; Gallium arsenide; Impact ionization; Noise reduction; Photonic band gap; Sun;
Journal_Title :
Photonics Technology Letters, IEEE
