Title :
Clock recovery at multiple bit rates using direct optical injection locking of a self-oscillating InGaAs-InP heterojunction bipolar phototransistor
Author :
Lasri, J. ; Dahan, D. ; Bilenca, A. ; Eisenstein, G. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
In this letter, we describe the use of direct optical injection locking of a self-oscillating InGaAs-InP heterojunction bipolar phototransistor to extract the clock of high-speed optical signals. We demonstrate a single MGM oscillator, which can be locked by 10- to 40-Gb/s return-to-zero signals with high efficiency and low noise.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical communication equipment; phototransistors; synchronisation; 10 to 40 Gbit/s; InGaAs-InP; InGaAs-InP heterojunction bipolar phototransistor; clock recovery; direct optical injection locking; high efficiency; low noise; multiple bit rates; return-to-zero signals; self-oscillating; Bit rate; Clocks; High speed optical techniques; Injection-locked oscillators; Nonlinear optics; Optical attenuators; Optical filters; Optical scattering; Optical transmitters; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
