• DocumentCode
    1552714
  • Title

    RF MEMS switches and switch circuits

  • Author

    Rebeiz, Gabriel M. ; Muldavin, Jeremy B.

  • Author_Institution
    Michigan Univ., Ann Arbor, MI, USA
  • Volume
    2
  • Issue
    4
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    59
  • Lastpage
    71
  • Abstract
    MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches
  • Keywords
    electrostatic actuators; semiconductor device reliability; semiconductor switches; wafer-scale integration; 0.1 to 100 GHz; RF MEMS switches; RF transmission line; electrostatic-type switches; micromechanical switches; reliability; switch circuits; wafer-scale manufacturing techniques; Distributed parameter circuits; Electrostatics; Magnetostatics; Micromechanical devices; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Switching circuits; Thermal force;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/6668.969936
  • Filename
    969936