DocumentCode :
1552746
Title :
Dielectrics in MOS devices, DRAM capacitors, and inter-metal isolation
Author :
Winarski, Tyson York
Author_Institution :
The Winarski Firm, Tempe, AZ, USA
Volume :
17
Issue :
6
fYear :
2001
Firstpage :
34
Lastpage :
47
Abstract :
This article provides a summary of the current state of the art in the field of dielectric/integrated circuit technology. More specifically, this article will cover the use of dielectrics in MOS devices, DRAM capacitors, and intermetal isolation. First, a brief history on the use of dielectrics in integrated circuits is provided to the reader. Then, the reader is presented with the basic physics that govern the properties of dielectrics. The reader is then provided with a detailed description of the use of dielectrics in connection with MOS devices, DRAM capacitors, and intermetal isolation individually. In addition, the reader is presented a summary of the current state of the art for dielectrics through an examination of the recent U.S. patents issued in this field of technology. Finally, a presentation on the future use of dielectrics in combination with integrated circuits is made.
Keywords :
DRAM chips; MIS devices; capacitors; dielectric materials; metallisation; DRAM capacitors; MOS devices; dielectric materials; integrated circuit technology; inter-metal isolation; Dielectric devices; Dielectric materials; Dielectrics and electrical insulation; FETs; Integrated circuit technology; MOS capacitors; MOS devices; MOSFETs; Random access memory; Solid state circuits;
fLanguage :
English
Journal_Title :
Electrical Insulation Magazine, IEEE
Publisher :
ieee
ISSN :
0883-7554
Type :
jour
DOI :
10.1109/57.969944
Filename :
969944
Link To Document :
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