Title :
1.5 μm wavelength DBR lasers consisting of 3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene
Author :
Raj, M.M. ; Wiedmann, J. ; Saka, Y. ; Yasumoto, H. ; Arai, S.
Author_Institution :
Res. Centre for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fDate :
8/5/1999 12:00:00 AM
Abstract :
1.5 μm wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR grooves thus reducing the diffraction loss compared to that obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from the measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets
Keywords :
III-V semiconductors; buried layers; distributed Bragg reflector lasers; gallium arsenide; indium compounds; reflectivity; semiconductor lasers; 1.5 micron; BCB/DBR groove; GaInAsP-InP; GaInAsP/InP DBR laser; air/semiconductor groove; buried benzocyclobutene polymer; diffraction loss; etching; output power; reflectivity; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990907
