• DocumentCode
    1552966
  • Title

    Multilayer Graphene Oxide/Cadmium Selenide Quantum-Dot-Coated Titanium Dioxide Heterojunction Solar Cell

  • Author

    Shanmugam, Mariyappan ; Bansal, Tanesh ; Durcan, Chris A. ; Yu, Bin

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
  • Volume
    33
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1165
  • Lastpage
    1167
  • Abstract
    We demonstrate a heterojunction solar cell employing multilayer graphene oxide (ML-GO) as the hole-conducting layer and cadmium selenide (CdSe) quantum-dot-coated titanium dioxide (TiO2) as the photoactive material. Multilayer graphene, synthesized by a chemical-vapor-deposition technique, is treated with low-power (25-W) oxygen plasma (~100 sccm) to convert into ML-GO, as confirmed by Raman spectroscopy. The ML-GO exhibits an optical bandgap of 3.6 eV extracted from UV-visible absorption spectroscopy. The heterojunction solar cell is implemented with a stacked heterostructure of ITO/TiO2/CdSe/ML-GO/Pt, yielding a short-circuit current density of 11.2 mA/cm2, an open-circuit voltage of 652 mV, and a photoconversion efficiency of 4.1% under a standard AM 1.5 illumination condition.
  • Keywords
    III-VI semiconductors; Raman spectroscopy; cadmium compounds; chemical vapour deposition; quantum dots; selenium compounds; short-circuit currents; solar cells; CdSe; ML-GO; Multilayer graphene; Raman spectroscopy; TiO2; UV-visible absorption spectroscopy; cadmium selenide; cadmium selenide quantum-dot-coated titanium dioxide heterojunction solar cell; chemical-vapor-deposition technique; electron volt energy 3.6 eV; heterojunction solar cell; hole-conducting layer; illumination condition; multilayer graphene oxide; open-circuit voltage; optical bandgap; photoactive material; photoconversion efficiency; power 25 W; short-circuit current density; voltage 652 mV; Absorption; Heterojunctions; Optical device fabrication; Photonic band gap; Photovoltaic cells; Plasmas; Wavelength measurement; Cadmium selenide (CdSe); graphene oxide (GO); heterojunction; quantum dot (QD); solar cell; titanium dioxide;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2201911
  • Filename
    6231645