Title :
A Lateral Power MOSFET With the Double Extended Trench Gate
Author :
Yue, Lei ; Zhang, Bo ; Li, Zaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A lateral power MOSFET with the double extended trench gate (DETG) is proposed in this letter. The double extended gate introduces the additional charges into the drift region and the substrate; then, the electric field distribution of the device is optimized to improve the breakdown voltage (BV) and the specific on-resistance (Ron, sp). Simulation results show that the BV of the DETG structure is increased from 126 V of the conventional trench gate (CTG) structure to 171 V with the same length and thickness of the drift region. Furthermore, its Ron, sp is nearly 64% less than that of the CTG structure.
Keywords :
MOSFET; electric breakdown; CTG structure; DETG structure; breakdown voltage; conventional trench gate structure; double extended trench gate; drift region; electric held distribution; lateral power MOSFET; on-resistance; voltage 126 V; voltage 171 V; Electric breakdown; Electrodes; Logic gates; Neodymium; Power MOSFET; Substrates; Breakdown voltage (BV); double extended trench gate (DETG); power MOSFET; specific on-resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2201690
