Title :
De-embedded ultra-low noise 0.1 μm gate length Ge/Si0.4 Ge0.6 p-MODFET
Author :
Enciso-Aguilar, M. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Hock, G. ; Hackbarth, T. ; Konig, U.
Author_Institution :
Fundamental Inst. of Electron., Univ. de Paris-Sud, Orsay, France
fDate :
11/22/2001 12:00:00 AM
Abstract :
De-embedded high frequency (HF) noise parameters of Ge p-channel modulation doped field effect transistors (MODFETs) on a Si0.4Ge0.6 virtual substrate have been determined for the first time. The 0.1 × 100μm devices have a minimum noise figure NFmin = 0.3 dB (0.5dB) ± 0.2dB, a noise resistance Rn = 95 Ω (90 Ω) ± 5 Ω, an optimum reflection coefficient Γopt = 0.7 ∠ 6° and an associated gain Gass = 14 dB (13 dB) at 1.2 GHz (2.5 GHz), at a bias corresponding to the optimum unity current-gain frequency fT = 55GHz and the maximum oscillation frequency f MAX = 135GHz. Noise results are given in the 1.2-12GHz frequency range and 20-160 mA/mm current range
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; semiconductor materials; 0.1 micron; 0.3 to 0.7 dB; 1.2 to 12 GHz; 135 GHz; 14 dB; 55 GHz; Ge-Si0.4Ge0.6; MODFETs; de-embedded high frequency noise parameters; maximum oscillation frequency; microwave noise; minimum noise figure; noise resistance; optimum reflection coefficient; optimum unity current-gain frequency; p-channel modulation doped field effect transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010954
