Title :
Drift mobility of electrons in AlGaN/GaN MOSHFET
Author :
Ivanov, P.A. ; Levinshtein, M.E. ; Simin, G. ; Hu, X. ; Yang, J. ; Khan, M.Asif ; Rumyantsev, S.L. ; Shur, M.S. ; Gaska, R.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
11/22/2001 12:00:00 AM
Abstract :
The dependence of electron mobility μn on sheet electron concentration in the channel has been measured for the first time in AlGaN/GaN MOSHFETs. The maximum value of μn ≃ 1400 cm2/Vs observed at ns = 7 × 1012 cm-2, is very close to the value derived from Hall measurements made on the same wafer. As the gate-bias voltage VG approaches the threshold value VT (VG → VT), the measured value of μn is ~100 cm 2/Vs. This is very close to the value of electron mobility in a bulk GaN layer. The mechanism controlling the mobility against sheet-carrier density dependence is discussed
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; electron density; electron mobility; gallium compounds; semiconductor device measurement; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; Hall measurements; MOSHFETs; electron mobility; gate-bias voltage; metal-oxide-semiconductor heterostructure field effect transistor; sheet electron concentration; sheet-carrier density dependence; threshold value; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010982
