DocumentCode
1553046
Title
80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode
Author
Sano, K. ; Murata, K. ; Otsuji, T. ; Akeyoshi, T. ; Shimizu, N. ; Sano, E.
Author_Institution
NTT Network Innovation Labs., Kanagawa, Japan
Volume
35
Issue
16
fYear
1999
fDate
8/5/1999 12:00:00 AM
Firstpage
1376
Lastpage
1377
Abstract
An 80 Gbit/s optoelectronic delayed flip-flop circuit which uses resonant tunnelling diodes and a uni-travelling-carrier photodiode is reported. The circuit design, which suppresses the effect of the AC current in the RTD pair, is the key to achieving such high-speed flip-flop operation. The monolithically fabricated circuit successfully operates at 80 Gbit/s while consuming 7.68 mW, and is the fastest flip-flop circuit ever reported
Keywords
delays; flip-flops; integrated optoelectronics; photodiodes; resonant tunnelling diodes; 7.68 mW; 80 Gbit/s; high-speed flip-flop circuit; monolithic integration; optoelectronic delay; resonant tunnelling diode; uni-travelling-carrier photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990944
Filename
790063
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