80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

An 80 Gbit/s optoelectronic delayed flip-flop circuit which uses resonant tunnelling diodes and a uni-travelling-carrier photodiode is reported. The circuit design, which suppresses the effect of the AC current in the RTD pair, is the key to achieving such high-speed flip-flop operation. The monolithically fabricated circuit successfully operates at 80 Gbit/s while consuming 7.68 mW, and is the fastest flip-flop circuit ever reported