DocumentCode
1553050
Title
High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semi-insulating-InP buried structure
Author
Yuda, M. ; Kato, K. ; Iga, R. ; Mitsuhara, M.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
35
Issue
16
fYear
1999
fDate
8/5/1999 12:00:00 AM
Firstpage
1377
Lastpage
1379
Abstract
A semi-insulating InP buried structure is applied to a uni-travelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ~120 mW (23.5 mA×5 V), a responsivity of 0.7 A/W, and a bandwidth of 47 GHz
Keywords
III-V semiconductors; buried layers; indium compounds; optical waveguide components; photodiodes; InP; input power; semi-insulating InP buried structure; uni-travelling-carrier waveguide photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990961
Filename
790064
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