Title :
High hole lifetime (3.8 μs) in 4H-SiC diodes with 5.5 kV blocking voltage
Author :
Ivanov, P.A. ; Levinshtein, M.E. ; Irvine, K.G. ; Kordina, O. ; Palmour, J.W. ; Rumyantsev, S.L. ; Singh, R.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
8/5/1999 12:00:00 AM
Abstract :
The hole lifetime τp in the n-base of 4H-SiC diodes with 5.5 kV blocking voltage has been measured in the temperature range 300-550 K. The τp increases monotonically in this temperature range from 0.6 to 3.8 μs. Forward current-voltage characteristics demonstrate a very high level of base modulation by minority carriers
Keywords :
carrier lifetime; high-temperature electronics; power semiconductor diodes; semiconductor device measurement; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 0.6 to 3.8 mus; 300 to 550 K; 4H-SiC diodes; 5.5 kV; SiC; base modulation; blocking voltage; current-voltage characteristics; forward I-V characteristics; high hole lifetime; minority carriers; n-base; power diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990897
