DocumentCode
1553066
Title
Principal component analysis of plasma harmonics in end-point detection of photoresist stripping
Author
Koh, A.T.-C. ; Thronhill, N.F. ; Law, V.J.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume
35
Issue
16
fYear
1999
fDate
8/5/1999 12:00:00 AM
Firstpage
1383
Lastpage
1385
Abstract
A principal component analysis (PCA) of plasma-generated harmonics monitored using a non-invasive ex-situ probe is reported. PCA trends due to gas pressure and RF power were demonstrated. Changes in harmonic levels during photoresist stripping have also been detected and were analysed with PCA to provide process end-point detection
Keywords
harmonics; photoresists; plasma materials processing; principal component analysis; semiconductor technology; sputter etching; RF power; Si; Si wafer processing; Si-Al; end-point detection; gas pressure; harmonic levels; photoresist stripping; plasma-generated harmonics; principal component analysis;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990930
Filename
790068
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