DocumentCode
1553071
Title
Time-dependent degradation law for reliable lifetime prediction in sub-0.25 μm bulk silicon N-MOSFETs
Author
Szelag, B. ; Kubicek, S. ; Meyer, K. De ; Balestra, F.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Volume
35
Issue
16
fYear
1999
fDate
8/5/1999 12:00:00 AM
Firstpage
1385
Lastpage
1386
Abstract
The hot-carrier-induced degradation of sub-0.25 μm bulk Si MOSFETs is studied. A new degradation law is proposed and compared to the main existing models. This comparison shows that the new model gives more accurate results. Using this degradation law, the maximum drain voltage for a 10% transconductance degradation after 10 years has been extracted. A reduced Vdmax as compared to the values given by the previous laws, which overestimate Vdmax for deep submicrometre devices, is determined
Keywords
MOSFET; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device reliability; silicon; 0.25 micron; NMOSFET; Si; bulk Si N-MOSFETs; deep submicron devices; device lifetime; hot-carrier-induced degradation; maximum drain voltage; model; n-channel MOSFET; reliable lifetime prediction; time-dependent degradation law; transconductance degradation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990954
Filename
790069
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