Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications

Author

Jones, D.R. ; Rees, P. ; Pierce, I. ; Summers, H.D.

Author_Institution

Sch. of Informatics, Univ. of Wales, Bangor, UK

Volume

37

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1632

Lastpage

1635

Abstract

Self-pulsating laser diodes operating at a wavelength of 650 nm are required in optical storage devices. Pulsation can be achieved by including saturable absorbing quantum wells in the p-doped cladding layer of an AlGaInP laser. A rate equation model of this kind of device is used to analyze the power output of the pulses by varying the cavity length and the absorber quantum-well configuration. Results indicate that certain performance tradeoffs occur between the power output and other characteristics that are subject to optical storage device constraints

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; optical disc storage; optical saturable absorption; quantum well lasers; semiconductor device models; 650 nm; AlGaInP laser; absorber quantum-well configuration; cavity length; optical storage; optical storage device constraints; p-doped cladding layer; power output; rate equation model; saturable absorbing quantum wells; self-pulsating AlGaInP laser diodes; DVD; Diode lasers; Equations; Laser feedback; Optical devices; Optical feedback; Optical noise; Optical sensors; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.970910

Filename

970910