Title :
DC and RF characteristics of advanced MIM capacitors for MMIC´s using ultra-thin remote-PECVD Si3N4 dielectric layers
Author :
Lee, Jae.-Hak. ; Kim, Dae-Hyun ; Park, Yong-Soon ; Sohn, Myoung-Kyu ; Seo, Kwang-Seok
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
We have fabricated advanced metal-insulator-metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N 4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (RF) measurements was as high as 2900 pF/mm2. Tenfold reduction of MIM capacitor size was successfully performed compared with conventional MIM capacitor with 2000-Å PECVD Si3N4 dielectric layer. Despite ultra-thin dielectric films of 200-Å thickness, the fabricated MIM capacitors showed good RF performance and high yield
Keywords :
MIM devices; MMIC; dielectric thin films; electric breakdown; plasma CVD coatings; silicon compounds; thin film capacitors; DC characteristics; MIM capacitor; MMIC; RF characteristics; Si3N4; Si3N4 ultra-thin dielectric film; breakdown field; capacitance; electrical properties; remote PECVD; yield; Area measurement; Capacitance measurement; Dielectric films; Dielectric measurements; Electric breakdown; Frequency measurement; MIM capacitors; Metal-insulator structures; Radio frequency; Semiconductor films;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
