DocumentCode :
1553387
Title :
New model extraction for predicting distortion in HEMT and MESFET circuits
Author :
Qu, Guoli ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume :
9
Issue :
9
fYear :
1999
fDate :
9/1/1999 12:00:00 AM
Firstpage :
363
Lastpage :
365
Abstract :
A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs
Keywords :
HEMT circuits; MESFET circuits; intermodulation distortion; microwave amplifiers; microwave circuits; HEMT circuits; IM distortion; IM measurements; MESFET circuits; Taylor series coefficients; amplifier designs; distortion; model extraction; saturation region; Data mining; Differential equations; Distortion measurement; HEMTs; Intermodulation distortion; MESFET circuits; Nonlinear distortion; Predictive models; Switches; Taylor series;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.790475
Filename :
790475
Link To Document :
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