Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy

Author

Nowak, J.J. ; Robertazzi, R.P. ; Sun, J.Z. ; Hu, G. ; Abraham, D.W. ; Trouilloud, P.L. ; Brown, S. ; Gaidis, M.C. ; O´Sullivan, E.J. ; Gallagher, W.J. ; Worledge, D.C.

Author_Institution

IBM-MagIC MRAM Alliance, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

2

fYear

2011

fDate

7/3/1905 12:00:00 AM

Firstpage

3000204

Lastpage

3000204

Abstract

Bit error rates below 10^-11 are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy. Tests were performed at wafer level, and error-free operation was achieved with 10 ns write pulses for all nondefective bits during a 66-h test. Yield in the 4-kb array was limited to 99% by the presence of defective cells. Test results for both a 4-kb array and individual devices are consistent and predict practically error-free operation at room temperature.

Keywords

MRAM devices; error statistics; magnetic tunnelling; perpendicular magnetic anisotropy; perpendicular magnetic recording; bit error rate; magnetic tunnel junction; perpendicular magnetic anisotropy; random access memory chip; spin transfer torque writing; spin-torque magnetic random-access memory; Arrays; Bit error rate; Error-free operation; Junctions; Magnetic tunneling; Sun; Switches; Spin electronics; magnetic random-access memory (MRAM); magnetic switching; spin-transfer torque;

fLanguage

English

Journal_Title

Magnetics Letters, IEEE

Publisher

ieee

ISSN

1949-307X

Type

jour

DOI

10.1109/LMAG.2011.2155625

Filename

5875962