DocumentCode :
1553531
Title :
Gap-Type a-Si TFTs for Backlight Sensing Application
Author :
Tai, Ya-Hsiang ; Chou, Lu-Sheng ; Kuo, Yan-Fu ; Yen, Shao-Wen
Author_Institution :
Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
7
Issue :
8
fYear :
2011
Firstpage :
420
Lastpage :
425
Abstract :
In this paper, a new photo device are proposed using gap-typed hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) as backlight sensing circuits. The system employs gap type a-Si TFTs, which has higher photo sensitivity, to sense illumination and increase device dynamic range. Meanwhile, the system with local dimming technologies could attain the purpose for self-adjusting function. It is expected that the integration of this sensing system onto the panel can be implemented without extra process development. Furthermore, the photo leakage characteristics of a-Si TFTs after optical stress are investigated and the corresponding calibration method is proposed to reduce the error in sensing the illumination intensity. This approach would provide the possibility for the sensors array to be integrated into the pixel with the same a-Si TFT device.
Keywords :
amorphous semiconductors; calibration; elemental semiconductors; hydrogen; optical sensors; sensor arrays; silicon; thin film transistors; Si:H; TFT device; backlight sensing circuit application; calibration method; gap-typed hydrogenated amorphous silicon thin-film transistor; illumination intensity; optical stress; photo leakage characteristics; photo sensitivity; sensor array; Calibration; Lighting; Logic gates; Metals; Sensors; Stress; Thin film transistors; Amorphous thin-film transistor (TFT); circuits; gap-type; light sensor;
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2011.2135838
Filename :
5875965
Link To Document :
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