• DocumentCode
    1553548
  • Title

    Electrical characterization of SiOx and SiNx prepared by PECVD technique on In0.53Ga0.47As

  • Author

    Lu, Chih-Cheng ; Ho, Chong-Long ; Wu, Meng-Chyi ; Shi, Tian-Tsrong ; Ho, Wen-Jeng

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    8
  • Issue
    6
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    1011
  • Lastpage
    1015
  • Abstract
    We have analyzed the electrical properties of both SiOx on InGaAs and SiNx on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ~400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing
  • Keywords
    III-V semiconductors; MIS structures; annealing; capacitance; charge injection; chemical interdiffusion; gallium arsenide; indium compounds; insulating thin films; interface states; leakage currents; plasma CVD coatings; secondary ion mass spectra; silicon compounds; 400 to 450 C; In0.53Ga0.47As; MIS structure; PECVD; SIMS; SiN-InGaAs; SiO-InGaAs; capacitance; film quality; furnace annealing; injected charges; interdiffusion; interface quality; interface trap density; leakage current; Annealing; Capacitance; Furnaces; Hydrogen; Indium gallium arsenide; Leakage current; Mass spectroscopy; Metal-insulator structures; Silicon compounds; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/94.971459
  • Filename
    971459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1553548