Title :
Edge breakdown issues in field emission displays
Author :
Ma, Xianyun ; Sudarshan, T.S.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
This paper addresses edge breakdown issues in vacuum gap structures similar to field emission displays, both from a theoretical and practical point of view. Several unique solutions have been developed. After using these technologies, the breakdown voltage of a 750 μm plain-vacuum gap formed by two thin-film electrodes was improved from ~16 to ~24 kV for the first run, and ~20 to 28 kV for the conditioned regime. The mechanism of breakdown in a plain vacuum gap is discussed
Keywords :
field emission displays; vacuum breakdown; 16 to 24 kV; 20 to 28 kV; 750 micron; breakdown mechanism; breakdown voltage; conditioned regime; edge breakdown issues; field emission displays; micro-spacer insulation; plain vacuum gap; thin-film electrodes; vacuum gap structures; Breakdown voltage; Brightness; Electric breakdown; Electrodes; Flat panel displays; Insulation; Phosphors; Transistors; Vacuum breakdown; Vacuum technology;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
